Crystallization and melting in metal-semiconductor multilayers.

Tuning interlayer exchange coupling of co-doped TiO2/VO2 multilayers via metal-insulator transition.

Reversibly switching interlayer exchange coupling (IEC) of magnetic semiconductor multilayers between ferromagnetic (FM) and antiferromagnetic (AFM) modes is a difficult but key issue for fabricating semiconductor giant magnetoresistance devices. Here, we show that such tunable IEC is achievable around room temperature in Co-doped TiO2/VO2 diluted magnetic semiconductor multilayers. On the basi...

Polaron Crystallization and Melting: Effects of the Long-range Coulomb Forces

On examining the stability of a Wigner crystal in an ionic dielectric, two competitive effects due to the polaron formation are found to be important: (i) the screening of the Coulomb force 1/εsr, which destabilizes the crystal, compensated by (ii) the increase of the carrier mass (polaron mass). The competition between the two effects is carefully studied, and the quantum melting of the polaro...

Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices

Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition

Low-Temperature Synthesis of Ultra-High-Temperature Coatings of ZrB 2 Using Reactive Multilayers

We demonstrate a route to synthesize ultra high-temperature ceramic coatings of ZrB2 at temperatures below 1,300 K using Zr/B reactive multilayers. Highly textured crystalline ZrB2 is formed at modest temperatures, because of the absence of any oxide at the interface between Zr and B, and the very short diffusion distance that is inherent to the multilayer geometry. The kinetics of the ZrB2 for...